| 摘要 |
Elimination of polymerization residues on a photosensitive mask formed at the surface of a semiconductor wafer involves exposure, curing and ordinary development of a photosensitive layer formed on a semiconductor wafer, to produce a patterned photosensitive mask, and heating the wafer to 100-140 deg C, without cooling, followed by washing with demineralized water at at least ambient temperature. Preferred Features: the semiconductor wafer is silicon. Heating of the silicon wafer can be a curing stage carried out after development but without the usual cooling. The silicon wafer can be washed immediately after curing which is carried out at around 140 deg C, in order to avoid any cooling. Independent claims are given for: (a) a method for eliminating polymerization residues on a photosensitive mask formed at the surface of a semiconductor wafer, where an operation of washing the wafer after exposure, curing and development of a photosensitive layer is performed at 40-60 deg C (preferably, around 60 deg C) instead of 22 deg C; (b) a method for eliminating polymerization residues on a photosensitive mask formed at the surface of a semiconductor wafer, where the wafer is subjected to additional washing with demineralized water at 40-60 deg C (preferably, around 60 deg C) after exposure, curing and development of a photosensitive layer; and (c) a deposition and development system including a heating device that provides demineralized water at 40-60 deg C for the development modules.
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