发明名称 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 Two pieces of semiconductor wafers 101 and 102 to be stacked and fused together are secured to wafer holders 201 and 202 respectively, and are then integrally held at a wafer hold unit 2. Rough position alignment is first applied to these semiconductor wafers 101 and 102 while supplying infrared light thereto from an infrared light source 30 of an infrared light system 3 for detection of a resultant lattice image at a detection unit 5. Then, fine position alignment is performed while supplying laser light from an laser light source 40 of a laser light system 4 for detection of a resultant diffraction image at the detection unit 5. Thus, in the manufacture of a semiconductor device having its crystal structure with three-dimensional periodical refractive index distribution employing precision multilayer stack methods by using a wafer fusion, a method and apparatus for manufacturing the semiconductor device is realized which is capable of achieving precise position alignment between lattice layers stacked over each other with reduced complexity in position alignment thereof.
申请公布号 CA2330866(A1) 申请公布日期 2001.07.13
申请号 CA20012330866 申请日期 2001.01.12
申请人 KANSAI TECHNOLOGY LICENSING ORGANIZATION CO., LTD.;SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 NODA, SUSUMU
分类号 G02B6/12;G02B1/02;G02B5/18;G02B6/122;H01L21/30;H01L21/68;H01L33/00;(IPC1-7):H01L21/77 主分类号 G02B6/12
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