| 摘要 |
<p>A method for forming a dielectric layer includes exposing a surface to a first dielectric material in gaseous form at a first temperature (Step 100). Nuclei of the first dielectric material are formed on the surface (Step 104). A layer of a second dielectric material is deposited on the surface (Step 108) by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.</p> |
