METHOD FOR FORMING BST THIN FILM CAPACITOR HAVING HIGH DIELECTRIC CONSTANT AND LOW LEAKAGE CURRENT DENSITY

摘要

PURPOSE: A formation method of a BST thin film capacitor having high dielectric constant and low leakage current density is provided to form an excellent BST thin film having a high dielectric constant and a low leakage current density by supplying a source gas while cutting-off period during the BST thin film deposition process using an organic metal CVD method. CONSTITUTION: A diffusion preventing layer and a lower electrode(26) are formed on a semiconductor substrate(20). Ba source gas, Sr source gas, and Ti source gas is supplied to the substrate. A BST thin film(28) is formed on the substrate by cutting-off the source gases and reacting the source gases. The gases supplying process and the BST thin film formation process is repeated with a constant period. The Ba source gas is Ba(TMHD), the Sr source gas is Sr(TMHD), and the Ti source gas is Ti(o-i-C3H8)4 or Ti(o-i-C3H8)2(TMHD).