发明名称 |
IN-SITU CONTRIL OF A DRY ETCHER |
摘要 |
A method includes measuring a surface non-uniformity of a wafer. A current state of an etch processing tool is determined. The surface non-uniformity of the wafer is compared with the current state of the processing tool. An operating parameter of the processing tool is adjusted based on the comparison of the surface non-uniformity of the wafer with the current state of the processing tool. A system includes a processing tool, a plurality of measuring devices, and a process controller. The processing tool is adapted for etch processing of a wafer. The plurality of measuring devices measure a surface non-uniformity of the wafer and determine a current state of the processing tool. The process controller compares the surface non-uniformity of the wafer with the current state of the processing tool and adjusts an operating parameter of the processing tool based on the comparison.
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申请公布号 |
WO0150520(A1) |
申请公布日期 |
2001.07.12 |
申请号 |
WO2000US24423 |
申请日期 |
2000.09.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LANSFORD, JEREMY |
分类号 |
H01L21/3065;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/3065 |
代理机构 |
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