HIGH DIELECTRIC CONSTANT MATERIAL DEPOSITION TO ACHIEVE HIGH CAPACITANCE
摘要
A method for forming a dielectric layer includes exposing a surface to a first dielectric material in gaseous form at a first temperature (Step 100). Nuclei of the first dielectric material are formed on the surface (Step 104). A layer of a second dielectric material is deposited on the surface (Step 108) by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.
申请公布号
WO0150509(A1)
申请公布日期
2001.07.12
申请号
WO2001US00184
申请日期
2001.01.04
申请人
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION