| 摘要 |
Integrated circuit memory devices include a memory cell field effect transistor in an integrated circuit substrate, a conductive plug that electrically contacts the memory cell field effect transistor and a titanium nitride bit line that electrically contacts the conductive plug opposite the memory cell filed effect transistor. Titanium nitride also may be used to electrically contact field effect transistors in the peripheral region of the integrated circuit memory device. Titanium nitride can be used as a bit line metal instead of conventional tungsten, and as a conductive plug to contact both p+-type and n+-type source/drain regions in the peripheral region of the memory device. The titanium nitride conductive plugs and bit lines may be formed simultaneously.
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