发明名称 |
Method of reducing stress corrosion induced voiding of patterned metal layers |
摘要 |
Stress corrosion induced voiding of patterned metal layers is avoided or substantially reduced by removing etching residues before gap filling. Embodiments include etching an Al or Al alloy layer employing fluorine and/or chlorine chemistry, wet cleaning, treating with a nitrogen-containing plasma at a temperature of at least about 400° C. and gap filling with a dielectric material, e.g. HDP oxide by HDP CVD.
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申请公布号 |
US2001007791(A1) |
申请公布日期 |
2001.07.12 |
申请号 |
US20010765426 |
申请日期 |
2001.01.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO MINH VAN;CHAN SIMON S.;SANDERFER ANNE E.;KO KING WAI KELWIN |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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