| 摘要 |
A variable conductance device (10, 20,100) having a first source region (11, 21, 111) and a first drain region (14, 23, 114) in a semiconductor substrate. A first channel region connects the first source and the first drain regions. A first resistive layer (13, 22) overlies the first channel region and has first and second electrical contacts (15, 16, 25, 26) spaced apart from one another thereon. The conductance of the path between the first source region (11, 21, 111) and the first drain region (14, 23, 114) depends on the current flowing between the first and second electrical contacts (15, 16, 25, 26). By adding a FET (216) having its gate and source shorted together to the variable conductance device (10, 20, 100), a device having the current gain characteristics of a bipolar transistor is obtained. The first drain region (14, 23, 114) is connected to the drain of the FET and the source of the FET is connected to the second electrical contact. The precise form of the current transfer function can be altered by connecting a number of variable conductance devices (10, 20, 100) according to the present invention in parallel.
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