发明名称 |
Method for fabricating a repair fuse box for a semiconductor device |
摘要 |
A method for fabricating a repair fuse box of a semiconductor device is disclosed. An etching stop polysilicon layer formed at a belt shape in edge portions of a repair fuse box is broken during a repair etching process without substantial departure from prior art methods for fabricating a repair fuse box of a semiconductor device. Thus, it is possible to improve repair yield of the semiconductor device.
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申请公布号 |
US2001007794(A1) |
申请公布日期 |
2001.07.12 |
申请号 |
US20010751847 |
申请日期 |
2001.01.02 |
申请人 |
KIM EUL RAK;SHIN JOONG SHIK |
发明人 |
KIM EUL RAK;SHIN JOONG SHIK |
分类号 |
H01L23/525;H01L27/108;(IPC1-7):H01L21/302 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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