SEMICONDUCTOR AND ITS FABRICATING METHOD

摘要

PURPOSE: A semiconductor and its fabricating method are provided to fabricate of both compact memory and high performance logic on the same semiconductor chip. CONSTITUTION: An unreacted cobalt or titanium(66) covering the horizontal surfaces of the nitride logic spacer(62) is removed by a wet etching process. Then a barrier nitride layer(72) is deposited over the entire surface of chip(9), followed by a dielectric(73) such as a layer of flowable doped glass, for example Boro-Phospho Silicate Glass(BPSG) or fluorinated BPSG(F-BPSG), which is then densified. Dielectric(73) may be polished level with memory gate stack(42), or may extend above the stack(42) by several thousand Angstroms.