RADIATION DETECTOR

摘要

PURPOSE: To obtain a radiation detector in which creeping discharge due to a bias voltage applied to a radiation sensitive semiconductor film is retarded. CONSTITUTION: The inventive radiation detector comprises a carrier selective high resistance film 1A formed on the entire surface between a radiation sensitive semiconductor film 1 and a voltage applying electrode 2, and a region 2A formed with no electrode is provided on the entire circumference of the voltage applying electrode 2. Dark current can be suppressed by the carrier selectivity of the carrier selective high resistance film 1A without sacrifice of signal response. The carrier selective high resistance film 1A prevents surface resistance of an amorphous semiconductor thick film 1 from lowering and since creeping discharge due to a bias voltage can be suppressed by surrounding the voltage applying electrode 2 with the region 2A formed with no electrode thereby ensuring a sufficient creeping breakdown voltage, a sufficient detection sensitivity can be attained by applying a high bias voltage to the voltage applying electrode 2.