| 摘要 |
PURPOSE: An integrated dynamic storage cell and method for manufacturing the same is provided to minimize the diffusion surface by improving the integrated dynamic storage cell having a small diffusion surface on a semiconductor substrate of a form. CONSTITUTION: The integrated dynamic storage cell includes a small diffusion surface on a semiconductor substrate of a form wherein a selective MOSFET having a gate terminal region(33), a source terminal region(26) and a drain terminal region(24) and a storage MOSFET which has a gate terminal region(32) connected with a connection doping region(27) via a dielectric thin film(35) and has a drain terminal region(24) are installed, the connection doping region(27) connects the source terminal region of the storage MOSFET to the drain terminal region(24) of the selective MOSFET, both of the MOSFET's are arranged on the side walls(29) of a trench, and the connection doping region(27) forms a bottom part of the trench.
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