Illuminating diode used in wireless data transmission has a light-producing layer sequence made of gallium aluminum arsenide and a neighboring p-conducting semiconductor layer

摘要

Illuminating diode (1) has a light-producing layer sequence (2, 5) made of gallium aluminum arsenide and a neighboring p-conducting semiconductor layer (6) which has a high doping zone (9) near to the surface with a higher doping concentration. An Independent claim is also included for a semiconductor arrangement for an illuminating diode comprising a p-conducting semiconductor layer with a thin high doping zone (9) having a doping concentration which is 2.5 -50m times higher than the remaining semiconductor layer. Preferred Features: Zinc is used as the dopant for the high doping zone.