发明名称 |
Process for producing compound semiconductor single crystal |
摘要 |
A process for producing compound semiconductor single crystal, comprises the steps of: putting a compound semiconductor raw material into a crucible, setting the crucible in a vertical type of heating furnace to heat and melt the raw material by a heater, promoting a nucleation on a surface of a raw material melt by leaving a solid raw material in a part of the raw material melt, solidifying the raw material melt gradually from the surface of the raw material melt without a seed crystal, and growing a crystal by using a nucleus generated by the nucleation.
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申请公布号 |
US2001007239(A1) |
申请公布日期 |
2001.07.12 |
申请号 |
US20010753662 |
申请日期 |
2001.01.04 |
申请人 |
FUJIMURA SHIGETO;ASAHI TOSHIAKI;SATO KENJI |
发明人 |
FUJIMURA SHIGETO;ASAHI TOSHIAKI;SATO KENJI |
分类号 |
H01L21/208;C30B11/00;C30B11/04;C30B11/14;(IPC1-7):C30B15/00 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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