METHOD AND APPARATUS FOR ANISOTROPIC ETCHING

摘要

A method is provided for treating a substrate material or a film present on the material surface. A first treatment step comprises plasma etching wherein ions are accelerated at voltages exceeding 50eV onto the material surface being etched to disrupt the surface bonding, with or without additional radiation. A second step of vapour etching the damaged surface is then performed. These two steps are repeated cyclically until a required etch depth is attained.