| 摘要 |
PURPOSE: To provide a method for manufacturing a semiconductor device, capable of embedding a conductive layer in a contact hole and reducing step differences in a layer. CONSTITUTION: The method for manufacturing the semiconductor device includes a step for forming an opening to the middle of an interlayer insulating film covering plural semiconductor elements formed on a semiconductor substrate and on a prescribed region of the semiconductor element, a step for forming the contact hole by removing the interlayer insulating film remaining at the lower side of the prescribed opening and for forming a dual damascene of the opening, a step for forming the conductive layer on the interlayer insulating film so as to embed at least the contact hole and the embedded wiring layer, and a step for forming a contact plug and the embedded wiring layer, by removing the conductive layer on the interlayer insulating film.
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