THIN-FILM TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

In a TFT (10), a gate electrode (19) and a channel domain (15) are plurally divided in the channel-length direction, a low-concentration domain (150) is formed between the divided channel domains (15), and a low-concentration drain domain (161) adjoins the second channel domain (152) located closest to the drain domain (17) side among the divided channel domains (15). Therefore, even if the impurity concentration is relatively high in the low-concentration domain (150) located between the divided channel domains (15) and a low-concentration drain domain (161), and abnormal increase of drain current in the saturated region can be prevented, and a TFT (10) with a high drain current level can be obtained. Thus the invention provides a TFT and its manufacturing method where abnormal increase of drain current in the saturated region is prevented and the drain current level in the saturated region is sufficiently high.