| 摘要 |
PURPOSE: An apparatus for chemical mechanical polishing of a substrate is provided to perform a CMP process such that a polishing pad having a small diameter with respect to the diameter of the substrate is used in a state where the polishing pad is oscillating or reciprocating and which is capable of permitting a substrate to be free from non-uniformity to be obtained. CONSTITUTION: The index table(12) is divided into four zones, namely a substrate loading/unloading zone(s1), the first polishing zone(s2), the second polishing zone(s3) and the third polishing zone(s4). The index table(12) is intermittently rotated at an angular degree of 90 deg.. Chucks(12a, 12b, 12c and 12d) for holding the substrate are disposed at the same intervals on the concentric circle of the axis(12e) of the index table(12). The chucks(12a, 12b, 12c and 12d) are independently and rotatively provided for holes(12f) bored in the index table. Each of guide members(30) is formed into a circular-arc shape that has a size capable of encircling 1/4 to 1/2 of the circumference of each chuck. The guide members(30) provided for the corresponding chucks are disposed at point-symmetrical positions each making a rotational angle of 180 deg. with respect to the axis(12e) of the index table.
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