| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is to change a process order between a bit line and a capacitor, thereby simplifying the manufacturing process of the semiconductor device. CONSTITUTION: A low concentration impurity is implanted into a semiconductor substrate(11) on which the first stack structure of a gate electrode and a mask insulating pattern have been formed at a cell region(I) and a peripheral region(II). An insulating layer is formed on the entire surface of the resultant structure. A sacrificial insulating pattern for exposing a to-be-formed storage electrode portion is formed on the insulating layer. The insulating layer is etched to form the first spacer on a sidewall of the first stack structure. A conductive layer for the storage electrode is formed on the entire surface of the resultant substrate and an upper portion of the conductive layer is separated to form a storage electrode(27). The second stack structure of a dielectric and a plate electrode conductive layer is formed on the entire surface of the resultant structure. The insulating layer remaining on the second stack structure and the peripheral region is etched to form a dielectric pattern, a plate electrode(29) and the second spacer and a source region and a drain region are formed at both sides of the second spacer.
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