| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is to prevent a step from being formed at an edge of a wafer by removing a photoresist layer through an EBR(edge bid removing) process. CONSTITUTION: An interlayer dielectric(13) is formed on a wafer(11). A photoresist layer is coated on the entire surface of the wafer. The photoresist layer is coated on the upper portion, the side surface, and the rear surface in the wafer. The photoresist layer coated on a rear A part at the edge of the wafer is removed by conducing an EBR process. A photoresist pattern is formed by patterning the photoresist layer, using an exposing mask. A metal interconnection contact hole is formed by etching the interlayer dielectric, using the photoresist pattern as an etching mask. A tungsten layer is formed on the entire surface of the wafer. A contact plug(19) is formed to bury in the metal interconnection contact hole by planarizing the tungsten layer through a CMP(chemical mechanical polishing) process.
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