METHOD FOR FORMING CYLINDRICAL STORAGE NODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method forming a cylindrical storage node is to remove a sacrificial insulating layer formed on a region where a large step difference is generated in forming the same and to form a spacer of the same, thereby preventing a bridge between the devices and improving reliability of the device. CONSTITUTION: An interlayer dielectric(23) having a contact plug(24) of a storage electrode is formed on a semiconductor substrate(20) including a cell region, a peripheral circuit region and a step difference region. A conductive layer, a sacrificial insulating layer and an anti-reflective coating are successively formed on the resultant structure. On a step difference portion of the region and the peripheral circuit region, a photoresist pattern is formed which exposes a portion wider than a portion to be a storage electrode in the cell region. The anti-reflective coating and the sacrificial insulating layer on the step difference region and the peripheral circuit region is removed using the photoresist pattern as an etching mask. The photoresist pattern is removed and then a cylindrical storage node is formed.