METHOD FOR MANUFACTURING MOS TYPE TRANSISTOR

摘要

PURPOSE: A method for manufacturing a MOS type transistor is provided to improve an electric characteristic of the transistor by controlling the threshold voltage and the hot carrier immunity. CONSTITUTION: The method for manufacturing a MOS type transistor sequentially stacks a gate oxide film(15) and a gate electrode layer(20) on a semiconductor substrate(10). The gate oxide film and the gate electrode layer are masking-etched to form a gate. A silicide layer is deposited on the resulting surface and is then blanket-etched to form a silicide spacer(25) at both sides of the gate. Ions are firstly injected to form a source/drain region. The first spacer layer is stacked on the resulting surface and is blanket-etched to form the first spacer(30a) at both sides of the silicide spacer. Ions are secondly injected into the source/drain region. The second spacer layer is stacked on the resulting surface and is then blanket-etched to form the second spacer at both sides of the first spacer. Ions are thirdly injected into the source/drain region.