CHARGE COUPLED DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A charge coupled device and a method for manufacturing the same are provided to improve the charge transfer efficiency by forming a channel stop region for dividing a horizontal charge coupled device into two parts. CONSTITUTION: A P type well(32) is formed on an N type semiconductor substrate(31). A BCCD(Buried Charge Coupled Device)(33) is formed on a predetermined region of the P type well(32). A channel stop region(34) is formed on a center surface of the BCCD(33) in order to divide BCCD(33) into two parts. A barrier transfer gate(35) is formed on the BCCD(33). A gate insulating layer(36) is formed on the semiconductor substrate(31) including the barrier transfer gate(35) and the BCCD(33). The first and the second poly gates(37,38) are formed on the gate insulating layer(36).