| 摘要 |
An apparatus for crystal growth includes a solid-state component (42) having a region (42a) whose valence electrons have been controlled so as to control the concentration of holes or electrons of a surface portion in response to the environment of a solution (43) containing a macromolecular compound, a pair of counter electrodes (44a) and (44b) provided to hold therebetween a space above the region (42a), and electric insulating materials (46a) and (46b) supporting the counter electrodes (44a) and (44b). The region (42a) is an impurity region formed on a silicon semiconductor substrate. In the crystal growth method, an electric field is applied to the solution (43) across the counter electrodes (44a) and (44b). Under an electric state generated on the surface of the region (42a), a crystal of the macromolecular compound is formed from the solution (43) to which the electric field is applied. <IMAGE> |
