METHOD FOR MEASURING SEMICONDUCTOR CRITICAL DIMENSION PATTERN DISPLACEMENT

摘要

PURPOSE: A method for measuring a semiconductor critical dimension pattern displacement is provided to more precisely measure a fine pattern, by correspondingly coping with high integration of a pattern and development of an illumination system. CONSTITUTION: The first test module of a line shape and the second layer test module of a line shape are formed on respective reticles. The first layer test module is transcribed to form the first line. The second layer test module is transcribed to form the second line. A displacement between the first line and the second line is measured.