METHOD FOR MANUFACTURING SRAM DEVICE

摘要

PURPOSE: A method for manufacturing an SRAM device is to remove a void without affecting a topology and reduce a resistance of a bit line, thereby improving an electrical characteristic and a yield of the device. CONSTITUTION: A word line is formed on a semiconductor substrate(22). The first interlayer dielectric layer(26) is formed to cover the semiconductor substrate. The second interlayer dielectric layer(28) is formed on the first interlayer dielectric layer. The third interlayer dielectric layer(30) is formed on the second interlayer dielectric layer. The interlayer dielectric layer is etched to form a contact hole that exposes a portion of the semiconductor substrate. A conductive plug(36) is formed within the contact hole on a junction region. A polysilicon layer(38) is deposited on an entire structure and a tungsten silicon layer(40) is deposited. The first interlayer dielectric layer or/and the second interlayer dielectric layer are formed with one of an LP-TEOS(low-pressure tetraethyl orthosilicate), a PE-TEOS(plasma-enhanced tetraethyl orthosilicate), an HTO(high temperature oxide) and an MTO(middle temperature oxide).