RAPID THERMAL PROCESS(RTP) METHOD

摘要

PURPOSE: A rapid thermal process(RTP) method is to prevent a wafer breakage and a degradation of device characteristic by reducing a thermal shock and a stress imposed on a wafer. CONSTITUTION: Wafers are stacked in a load-lock chamber. The stacked wafers are transferred to a process chamber and a temperature is ramped up. The ramped-up temperature of the wafers is maintained. The temperature of the wafer is ramped down. The wafers are transferred to a cooled-down chamber and are maintained without contacting with a cooling plate(low-speed cooling step). The wafers are maintained while contacting with the cooling plate(high-speed cooling step). The low-speed cooling step is performed for 1 second to 99 seconds. The high-speed cooling step is performed for 1 second to 99 seconds.