| 摘要 |
PURPOSE: A flash memory device is provided to reduce layout size and to increase produce characteristics by connecting a dummy cell with a gate terminal of a main cell rather than a pump circuit in order. CONSTITUTION: The flash memory device includes a sense amplifier(21), a regulator circuit(24), a dummy cell(25), a controller(26) and a switch(N11). The sense amplifier receives a main cell current as well as a reference cell current and performs programming verification by comparing the received signals. The regulator circuit applies voltages on the gates of the main cell and the reference cell. The dummy cell applies current on the sense amplifier with the main cell current. The controller controls the dummy cell. The switch delivers the dummy cell current to the sense amplifier according to a control signal. The switch, composed of a NMOS transistor, is operated by the program verification signal.
|
