METHOD FOR FORMING BPSG FILM IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for forming a BPSG film in semiconductor devices is provided to prevent an indented phenomenon due to over etching by making the etching rate at the interface of a mask same to that in other portions by increasing an adhisive force of a BPSG film and the mask. CONSTITUTION: The method for forming a BPSG film in semiconductor devices deposits a BPSG film on a wafer in which an underlying structure is formed by means of a given process. The wafer onto which the BPSG film is deposited is loaded onto a reaction furnace. The BPSG film is treated by an annealing process at the temperature of 750 - 900 Celsius degree for 10 - 40 minutes by ramping up the reaction furnace. The BPSG film is unloaded by ramping down the temperature of the reaction furnace to 200 - 700 Celsius degree. Only given portion of the BPSG film is etched.