| 摘要 |
PURPOSE: A method for manufacturing a flash memory is provided to reduce the number of ion injection process with preventing silicon loss during etching a field oxide layer. CONSTITUTION: At first, a tunnel oxide layer(18) is formed on an active region of the substrate, a conductive material is vaporized on the tunnel oxide layer and patterned to form a floating gate(20). Then, a dielectric film(22) and a conductive material are vaporized on the result and patterned to form a dielectric film pattern(22) and a control gate(25). Then, a spacer made of a dielectric material is formed on the sidewall of the cell gate electrode made of a multiple structure of the control gate, dielectric film and the floating gate. At third, a photolithography and etching operations using a source mask and a common source coupling mask are performed to remove a field oxide layer corresponding to the common source coupling region while etching the spacer of the cell gate electrode around the region on which a source region is to be formed. At forth, a drain mask photolithography is performed, a conductive ion is ion-injected on the substrate to form a source/drain region between the cell gate electrodes and between the cell gate electrode and the field oxide layer while form a common source coupling region(34c) on the substrate from which the field oxide layer is removed.
|
