METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is to uniformly oxidize a silicon surface by simultaneously injecting an oxygen gas and a hydrogen gas under a high temperature and a low pressure atmosphere. CONSTITUTION: A pad oxide film(102) is formed on a substrate(100), and a pad nitride film(104) is deposited on the pad oxide film. The pad nitride film and the pad oxide film are patterned through a lithography and etching process using an isolation mask. The exposed substrate is selectively etched by a desired depth to form a trench. After the substrate is loaded into an annealing chamber, an oxygen gas and a hydrogen gas are injected into the chamber to deposit a sacrificial film(106) on a sidewall and bottom of the trench. After the sacrificial film is removed, a liner oxide film(108) is deposited in the trench under a same condition as that of the sacrificial film forming process. The trench is buried with a gap fill oxide film(110) through a high density plasma process.