THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: Thin film transistor and method for manufacturing the same are to generate a height difference between an ohmic contact layer and a source and drain electrode, thereby enhancing the surface flatness. CONSTITUTION: A gate electrode(33) is formed on a selected portion of a transparent substrate(31). A gate insulating film(35) is deposited to cover the gate electrode. An active layer(37) is formed on the gate insulating film such that the active layer corresponds to the gate electrode. An ohmic contact layer(39) is formed at both sides of the active layer to define a channel length. A thin metal film is deposited on the resultant structure to cover the ohmic contact layer and the gate insulating film and then a photoresist pattern is formed on the thin metal film. The thin metal film is first etched by using the photoresist pattern as a mask to form a source electrode(41) and a drain electrode(43) and is secondly etched such that a selected portion of the channel side is exposed.