| 摘要 |
PURPOSE: A protective circuit for an electrostatic discharge(ESD) is to improve the tolerance of the ESD and a charged device model(CDM) by dispersing the flow of charge to a pull-up transistor and a pull-down transistor. CONSTITUTION: The protective circuit comprises an output pad(31), a main chip(32), and a resistor(R1) connected between the pad and the main chip. A pull-up PMOS(p-channel metal oxide semiconductor) transistor(33) is connected between the output pad and the resistor, and includes a drain connected to the output pad, a source connected to Vcc, and a gate connected to the main chip. The first NMOS(n-channel metal oxide silicon) transistor(34) is connected between the output pad and the resistor, and includes a drain connected to the output pad, a source connected to Vssq, and a gate connected to the main chip. The second NMOS transistor(35) is connected between the resistor and the main chip, and is connected to the Vss.
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