| 摘要 |
PURPOSE: A method for cleaning a wafer using a laser is provided to reduce pollutants due to chemicals and simplify a cleaning process by using a laser beam and a nitrogen gas instead of a chemical cleaning process using pure water and chemicals. CONSTITUTION: A wafer is transferred automatically to a cleaning space. A laser beam is scanned to the transferred wafer to separate pollutants adhered on the wafer. The separated pollutants are exhausted to an outside by injecting an inactive gas to the separated pollutants. In the scanning process, ArF excimer laser is used as the laser beam. In addition, KrF excimer laser is used as the laser beam.
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