| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is to allow a uniform polishing of aluminum layer in the semiconductor device having the aluminum layer as an interconnection, thereby enhancing the reliability and reproduction. CONSTITUTION: The first metal interconnection(22) is formed on an insulating substrate(21) formed on a semiconductor substrate. The first interlayer insulating layer(23) is deposited on the entire surface of the resultant substrate and is then patterned to form a via contact hole for exposing a selected portion of the first metal interconnection and a trench in which the second metal interconnection is being formed. An aluminum layer(24) is formed on the entire surface of the resultant substrate. Nitrogen(N+) ion is implanted into a lower portion of the aluminum layer and the resultant substrate is thermally annealed to form an AlNx layer(25) in the aluminum layer. The aluminum layer is removed by a chemical and mechanical polishing method to form the second metal interconnection. The AlNx layer is used as an etching stop layer. The second interlayer insulating layer is formed on the entire surface of the resultant substrate.
|
