METHOD FOR FORMING FINE CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine contact hole of a semiconductor device is provided to increase an aspect ratio of a contact hole by forming the contact hole within an interlayer dielectric without increasing a thickness of a photoresist. CONSTITUTION: An interlayer dielectric(20) is formed on a semiconductor substrate(10). An anti-reflective layer(22) is formed on the interlayer dielectric(20). A photoresist pattern is formed on the anti-reflective layer(22). The anti-reflective layer(22) is etched selectively by performing a self aligning process for the photoresist pattern. The photoresist pattern is removed. A selective epitaxial layer is formed by performing a selective epitaxial process on an upper portion and a side of the patterned anti-reflective layer(22). A contact hole(28) is formed by etching the exposed interlayer dielectric(20).