METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE HAVING HIGH CAPACITANCE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor memory device having high capacitance is provided to prevent the bridge between storage node electrodes or prevent a storage node electrode from being felled in process for removing a sacrificial insulating film. CONSTITUTION: The method includes eight steps. The first step is to form an inter-layer insulating film(12) on a lower structure(10) of a semiconductor substrate and a contact plug connected to a junction area of the substrate in the inter-layer insulating film. The second step is to form a protective thin film(16) on the entire surface of the inter-layer insulating film in which the contact plug is formed. The third step is to sequentially form a conductive film for a plate node and a hard mask on the entire surface of a resultant in which the protective thin film is formed. The fourth step is to form an opened portion to secure the area of a storage node electrode which is formed later by etching the hard mask and the conductive film. The fifth step is to form a dielectric thin film(24) on structure in which the opened portion is formed. The sixth step is to form a conductive film(26) for the first storage node on the upper portion of the dielectric thin film. The seventh step is to expose the surface of the contact plug using an entire surface etching process. The eighth step is to form a conductive film(28) for the second storage node into the opened portion.