| 摘要 |
PURPOSE: A method for manufacturing a contact hole for a storage node electrode of a semiconductor is provided to form a uniform polymer on a photoresist by using a HBr gas to increase margin during contact hole etching. CONSTITUTION: At first, a reflection protection layer(30) is vaporized on a sacrifice dielectric layer which defines storage node layer pattern region in a semiconductor structure. Then, a photoresist pattern(40) for the storage node electrode is formed on the reflection protection layer. At the third step, a polymer(42a,42b) is formed on the photoresist pattern for enlarging the contact hole by using the HBr gas. Then, a lower sacrifice dielectric layer is etched by using the photoresist pattern with the polymer thereon as a mask to etch the lower sacrifice and form the contact hole for the storage node electrode. At the fifth step, the photoresist pattern is removed.
|
