METHOD FOR FORMING LDD OXIDE FILM IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for forming an LDD oxide film is provided to improve reliability of devices due to increased resistance against a hot carrier characteristic by forming the LDD oxide film on a semiconductor substrate. CONSTITUTION: The method for forming a lightly doped drain(LDD) oxide film stacks a gate oxide film(15) and a gate electrode layer(20) on a semiconductor substrate(10). A photoresist film is stacked at a portion where a gate electrode will be formed and is then etched to form a gate. An LDD oxide film(30) is deposited at a portion where an LDD region will be formed under oxynitride or nitrogen dioxide atmosphere. The LDD region is formed by injecting ions at both sides of the gate. An oxide film is deposited at both sides of the gate to form a spacer film.