SEMICONDUCTOR MEMORY DEVICE HAVING ROW REPAIR OF METHOD REPLACING MAIN WORD LINE

摘要

PURPOSE: A semiconductor memory device is provided to supply a more effective repair method capable of increasing the yield in a highly integrated and a large capacity semiconductor memory device. CONSTITUTION: The semiconductor memory device having a large number of cell blocks includes a predetermined fuse box group(300), a repair signal adding portion(310), a block selecting signal generating portion(330) and a repair row decoder. The predetermined fuse box group is provided to each of a cell block to output the information for a block repairing in response to a row address. The repair signal adding portion makes the driving of a normal row decoder stop and is to begin the driving of a repairing circuit in response to an output of the fuse box group. The block selecting signal generating portion selects a block repairing in response to an output from the repair signal adding portion and a block selecting address. The repair row decoder drives a redundant main word line in response to an output from the fuse box group and a block selecting signal.