| 摘要 |
PURPOSE: A method for manufacturing a phase shift mask is to implement only one depositing step of a photoresist and only one removing step of the same so that manufacturing cost and time are reduced, using a CSP(chemical swelling process). CONSTITUTION: On a substrate(20), a shift layer(21), a metal layer and a photoresist are successively deposited. A photoresist pattern is formed by exposing and developing a part of the photoresist to expose the metal layer. Chemicals for CPS are deposited on the entire structure and a portion which is formed of a thickened region with a reaction of the photoresist and the chemicals is defined by a mask with its upper portion and then implemented by an exposure. The chemicals reacted by the exposure are removed and the metal layer is etched using the exposed photoresist pattern as a mask. The shift layer, residual photoresist and photoresist pattern, which are exposed by the etching of the metal layer, are simultaneously etched, and then the metal layer and residual photoresist, which are exposed by removing of the photoresist pattern, are removed to complete a final pattern.
|
