| 摘要 |
PURPOSE: A thin film transistor and a method for manufacturing the same are provided to reduce a processing time by depositing an insulating layer, an active layer, and an omic contact layer in a plasma state. CONSTITUTION: A substrate is loaded within a deposition system. The first mixing gas of NH3, N2, and SiH4 is injected into the deposition system. A silicon nitride layer is formed on the substrate by forming plasma within the deposition system. The first mixing gas is exhausted. The second mixing gas of H2 and SiH4 is injected into the deposition system. A pure amorphous silicon is formed on the nitride layer by using the second mixing gas. The second mixing gas is exhausted. The third mixing gas of H2, SiH4, and PH3 is injected into the deposition system. A doped amorphous silicon is formed on the pure amorphous silicon.
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