METHOD FOR ISOLATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for isolating a semiconductor device is to remove a bird's beak and improve the isolation ability by forming a nitride oxide layer and a thermal oxide layer in this order through a thermal oxidation process using the vapor. CONSTITUTION: A buffered oxide layer(203) is formed on a semiconductor substrate(201) at the thickness of 1000 to 2000 angstroms. The first nitride layer(205) is coated on the buffered oxide layer. A photoresist layer is coated on the first nitride layer. An opening is formed by etching the first nitride layer and the buffered oxide layer through an ion reactive etching process. The semiconductor substrate is exposed by forming the opening. The second nitride layer is formed by implanting a nitrogen ion into an upper portion of the exposed semiconductor substrate. An oxide nitride layer(211) is formed on the second nitride layer. A thermal oxide layer(213) is formed on the oxide nitride layer. Thereby, an isolation layer(215) is formed at the thickness of 2000 to 6000 angstroms.