| 摘要 |
PURPOSE: A semiconductor memory device compensating for a cross-talk noise is provided to compensate for the cross-talk noise of a global data bus line by adding a PNP transistor to a data bus line. CONSTITUTION: The semiconductor memory device includes a plurality of global data bus lines(200), as well as a resistor. The global data bus lines deliver the data from cells to an output buffer. The resistor is connected with two terminals of each of the global data bus lines and applies source voltage. The resistor is further implemented with a PMOS transistor(210) whose gate is connected with a ground terminal and whose source-drain path is formed between the source voltage and the global data bus line.
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