| 摘要 |
PURPOSE: A method for manufacturing a merged semiconductor device using a double spacer is provided to prevent a substrate of a peripheral circuit from being damaged when etching for forming a contact hole of the merged semiconductor device is performed and improve inter-layer insulating characteristic and gap fill characteristic by using a nitride thin film as an ion barrier layer of a BPSG film. CONSTITUTION: The method includes eight steps. The firs step is to form a gate oxide film and a gate electrode on each of a memory cell area(100) and a peripheral circuit area(200) on a semiconductor substrate(10). The second step is to form the first spacer(18) formed of the first insulating material on the side wall of the gate electrode. The third step is to implant a conductive type impurity in the substrate of the memory cell area to form a source/drain junction(20). The fourth step is to deposit the second insulating material on the entire surface of a resultant of the third step, mask a memory cell area only and then etch the entire surface of the second insulating material to form the second spacer(22) on the side wall of the first spacer of the peripheral circuit area. The fifth step is to implant a conductive type impurity in the substrate of the peripheral circuit area to form a source/drain junction(24). The sixth step is to remove all of the second insulating material remaining on the substrate of the memory cell area and the second spacer of the peripheral circuit area. The seventh step is to form a nitride thin film(26) for an etch stop on the entire surface of a resultant of the sixth step. The eighth step is to form an inter-layer insulating film(28) on the upper portion of the nitride thin film.
|
