| 摘要 |
PURPOSE: A flash memory device is provided to secure a coupling ratio and reduce the reduction margin of the device by forming a control gate using a trench. CONSTITUTION: The flash memory device forms a gate oxide film(12), floating gates(13), source/drain regions(14,15) and a gate sidewall spacer(16) on a semiconductor substrate(11). The first interlayer insulating film is formed on the substrate between the floating gates and is then flattened. The second interlayer insulating film(18) is formed on the entire surface of the substrate and is then flattened. A given portion of the spacer on the gate side and the second interlayer insulating film on the floating gates are etched to form a trench. A dielectric film and a control gate of a stack structure are formed within the trench.
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