| 摘要 |
PURPOSE: A method of measuring displacement of a fine pattern is to calculate difference of a coordinate value between an inner hole and an outer hole, thereby measuring a fine apochromatic component of a lens. CONSTITUTION: The first photoresist is doped on a semiconductor substrate(100). The first pattern layer is then formed by a process of patterning. Using an etching process, a trench area is formed on the first pattern layer. When the etching is completed, the first photoresist on the first pattern layer is removed. By this etching process, space is formed within the semiconductor substrate with a predetermined area. The space is used as an inner hole. The second photoresist is then doped on the first pattern layer to form the second pattern layer. Upon the pattern structure of the second pattern layer, the inner hole and an outer hole is formed. After obtaining a coordinate value of the inner hole and the outer hole, its difference is calculated to measure displacement of the pattern.
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