| 摘要 |
PURPOSE: A method for manufacturing a fuse of a semiconductor device is provided to secure a cutting process margin of a fuse conductive layer by controlling thickness of the fuse conductive layer. CONSTITUTION: An insulating layer(33) is formed on a structure formed with the n-1th metal layer(31). An upper face of the n-1th metal layer(31) is exposed by performing a photo lithography process. A metal layer(37) is formed by depositing a tungsten thereon. A fuse mask(38) is formed on the metal layer(37) by using a photoresist. The metal layer(37) is etched. The fuse mask(38) is removed. A plug and a fuse(37) are formed by etching back the metal layer(37). The nth metal layer is formed therefrom.
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