发明名称 |
BURIED LOCAL INTERCONNECT |
摘要 |
<p>A method of fabricating a buried local interconnect in a substrate and an integrated circuit incorporating the same are provided. The method includes the steps forming a trench in the substrate and forming a first insulating layer in the trench. A conductor layer is formed on the first insulating layer. A portion of the conductor layer is removed to define a local interconnect layer and a second insulating layer is formed in the trench covering the local interconnect layer. The method provides for a local interconnect layer buried beneath a dielectric layer of an integrated circuit, such as a shallow trench isolation layer. Areas of a substrate above the silicon-silicon dioxide interface formerly reserved for local interconnect layers in conventional processing may now be used for additional conductor lines.</p> |
申请公布号 |
EP1114458(A1) |
申请公布日期 |
2001.07.11 |
申请号 |
EP19990906743 |
申请日期 |
1999.02.05 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
HAUSE, FREDERICK, N.;GARDNER, MARK, I.;MAY, CHARLES, E. |
分类号 |
H01L21/76;H01L21/768;H01L21/3205;H01L21/8234;H01L23/52;H01L23/535;H01L27/088;(IPC1-7):H01L23/535;H01L21/74 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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